Ultrathin Al?Assisted Al <sub>2</sub> O <sub>3</sub> Passivation Layer for High?Stability Tungsten Diselenide Transistors and Their Ambipolar Inverter (Adv. Electron. Mater. 4/2022)
نویسندگان
چکیده
Transition Metal Dichalcogenides Seongin Hong, Sunkook Kim, and colleagues present the first report which not only proposes a novel approach to improve stability of two-dimensional transition metal dichalcogenides based field-effect transistors but also implements complementary oxide semiconductor inverter circuit using it. In article number 2101012, authors develop high-stability tungsten diselenide with an ultrathin Al-assisted alumina passivation.
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ژورنال
عنوان ژورنال: Advanced electronic materials
سال: 2022
ISSN: ['2199-160X']
DOI: https://doi.org/10.1002/aelm.202270017